* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) Available D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise
LSD11N65F Datasheet (265.75 KB)
LSD11N65F
VBsemi
265.75 KB
N-channel 650v power mosfet.
LSD11N65F-VB
LSD11N65F-VB Datasheet
/$IBOOFM7 %4
Power MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs .
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