LSD11N70 Datasheet (Lonten) - N-channel MOSFET

LSD11N70, N-channel MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Product Summary VDS @ Tj,max 750V RDS(on),max 0.37Ω

LSD11N70 Features

* Ultra low RDS(on)

* Ultra low gate charge (typ. Qg = 29nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage