A2SHB Datasheet - Low Power Semi

A2SHB, N-Channel MOSFET

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General .
The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology.

Features

* 20V/3.5A, RDS(ON)=50mΩ(Typ. )@VGS=4.5V
* 20V/3.0A, RDS(ON)=75mΩ(Typ. )@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* notebook computer power management and other battery powered circuits where high-side switching are needed. Ordering Information LPM2302-

A2SHB-LowPowerSemi.pdf