Part number:
2N2222UA
Manufacturer:
MA-COM
File Size:
612.30 KB
Description:
Radiation hardened npn silicon switching transistors.
2N2222UA Datasheet (612.30 KB)
* Qualified to MIL-PRF-19500/255
* Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si)
* TO-18 (TO-206AA), Surface mount UA & UB Packages Applications
* Switching and Linear Applications
* DC and VHF Amp
2N2222UA Datasheet (612.30 KB)
2N2222UA
MA-COM
612.30 KB
Radiation hardened npn silicon switching transistors.
📁 Related Datasheet
2N2222UB - Radiation Hardened NPN Silicon Switching Transistors
(MA-COM)
2N2221A, L, UA, UB & 2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Features
Qualified to MIL-PRF-19500/255 Le.
2N2222 - NPN Silicon Transistor
(SEMTECH)
2N2222 / 2N2222A
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group acco.
2N2222 - Silicon Planar NPN Transistor
(STMicroelectronics)
2N2222AHR
3
1 2
LCC-3
1 2 3
TO-18
3
4 1
2
UB
Pin 4 in UB is connected to the metallic lid.
Figure 1. Internal schematic diagramI
Hi-Rel 40 V, 0.8.
2N2222 - NPN Amplifier Transistor
(ON Semiconductor)
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
.
2N2222 - NPN SILICON PLANAR SWITCHING TRANSISTORS
(CDIL)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221 2N2222 TO.
2N2222 - Bipolar NPN Device
(Seme LAB)
2N2222
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
2N2222 - NPN Switching Transistors
(MCC)
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
2N2222 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 30.
