MA4AGBLP912

AlGaAs Beamlead PIN Diode

MA-COM

MA4AGBLP912 Features

* Low Series Resistance

* Low Capacitance

* 5 Nanosecond Switching Speed

* Can be Driven by a Buffered +5 V TTL

* Silicon Nitride Passivation

* Polyimide Scratch Protection

* RoHS Compliant Applications

* Aerospace & Defense

* I

MA4AGBLP912 General Description

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process opti.

MA4AGBLP912 Datasheet (318.28 KB)

MA4AGBLP912 Datasheet Preview — Preview of MA4AGBLP912 PDF

Datasheet Details

Part number:

MA4AGBLP912

Manufacturer:

MA-COM

File Size:

318.28 KB

Description:

Algaas beamlead pin diode.

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MA4AGBLP912 AlGaAs Beamlead PIN Diode MA-COM

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MA4AGBLP912 Features

MA4AGBLP912 General Description

Datasheet Details

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Description:

MA4AGBLP912 Distributor