MA4AGBLP912, MA4AGBLP912-MA Datasheet - MA-COM

MA4AGBLP912 AlGaAs Beamlead PIN Diode

The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process opti.

MA4AGBLP912 Features

* Low Series Resistance

* Low Capacitance

* 5 Nanosecond Switching Speed

* Can be Driven by a Buffered +5 V TTL

* Silicon Nitride Passivation

* Polyimide Scratch Protection

* RoHS Compliant Applications

* Aerospace & Defense

* I

MA4AGBLP912-MA-COM.pdf

MA4AGBLP912 Datasheet Preview — This datasheet PDF includes multiple part numbers: MA4AGBLP912, MA4AGBLP912-MA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MA4AGBLP912, MA4AGBLP912-MA

Manufacturer:

MA-COM

File Size:

318.28 KB

Description:

Algaas beamlead pin diode.

Note:

This datasheet PDF includes multiple part numbers: MA4AGBLP912, MA4AGBLP912-MA.
Please refer to the document for exact specifications by model.

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TAGS

MA4AGBLP912 MA4AGBLP912-MA AlGaAs Beamlead PIN Diode MA-COM

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