MA4AGBLP912 Datasheet, Diode, MA-COM

MA4AGBLP912 Features

• Diode
• Low Series Resistance
• Low Capacitance
• 5 Nanosecond Switching Speed
• Can be Driven by a Buffered +5 V TTL
• Silicon Nitride Passivation

PDF File Details

Part number:

MA4AGBLP912

Manufacturer:

MA-COM

File Size:

318.28kb

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📄 Datasheet

Description:

Algaas beamlead pin diode. The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM’s patented het

MA4AGBLP912 Application

• Applications
• Aerospace & Defense
• ISM Description The MA4AGBLP912 is an Aluminum-GalliumArsenide anode enhanced, beam lead PIN di

TAGS

MA4AGBLP912

MA-COM

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