MA4AGBL912

AlGaAs Beamlead PIN Diode

MA-COM

MA4AGBL912 Features

*  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS Compliant Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead

MA4AGBL912 General Description

M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a .

MA4AGBL912 Datasheet (594.02 KB)

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Datasheet Details

Part number:

MA4AGBL912

Manufacturer:

MA-COM

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594.02 KB

Description:

Algaas beamlead pin diode.

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MA4AGBL912 AlGaAs Beamlead PIN Diode MA-COM

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MA4AGBL912 Features

MA4AGBL912 General Description

Datasheet Details

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Description:

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