MA4AGBLP912 - AlGaAs Beam Lead PIN Diode
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode.
AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices.
These devices are fabricated on a OMCVD epitaxial wafer usin
