MSS40-048-P55 - Medium Barrier Silicon Schottky Diodes
The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.
Rev.
V1 Chip Electrical Specifications: TA = 25°C Mod
