Description
This N-Channel MOSFET is produced using Mos-tech
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on
-state
resistance and yet maintain superior swit
ching
performance.These devices are well suited for low
voltage and battery powered applications where low inline power loss and fast switching are required.Applications
DC/DC converter
Load switch
Motor drives
Features
- 5.6 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ V GS = 4.5 V.
- Low gate charge (9.5 nC typical).
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
DD DD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed.