Description
07 MOS-TECH Semiconductor Co.,LTD May 2009 07 30V N-Channel PowerTrench® MOSFET General .
This N-Channel MOSFET is produced using Mos-tech
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize on
-st.
Features
* 5.6 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ V GS = 4.5 V
* Low gate charge (9.5 nC typical)
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
DD DD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
Absol
Applications
* where low inline power loss and fast switching are required. Applications
* DC/DC converter
* Load switch