MT10G10 Datasheet - MT Semiconductor

MT10G10 N-Channel MOSFET

MT10G10 1&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary VDS = 100V I D =15A (V GS= 10V) R DS(ON) < 13 m @VGS =10V The MT10G10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat.

MT10G10-MTSemiconductor.pdf