MT11G07N5 Datasheet - MT Semiconductor

MT11G07N5 N-Channel MOSFET

MT11G07N5 1&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary VDS = 100V I D = 80A (VGS = 10V) R DS(ON) < 10 m @VGS =10V The MT11G07N5 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rec.

MT11G07N5-MTSemiconductor.pdf