MT11G035B Datasheet - MT Semiconductor

MT11G035B N-Channel MOSFET

MT11G035B 1&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary VDS = 100V I D = 160A (VGS = 10V) R DS(ON) 4.5 m @VGS =10V The MT11G035B SGT MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif.

MT11G035B-MTSemiconductor.pdf