MT2312 Datasheet - MT Semiconductor

MT2312 N-Channel MOSFET

S OT 23-3L par ts ar e s hipped i n tape. T he carrier tape is made from a d issipative (carbon filled) polycarbonate resin. T he cover tape i s a m ultilay er film (Heat Activated Adhes ive in nature) primarily c omposed o f polyester film, adhes ive l ayer, seal ant, and anti-static s prayed ag e.

MT2312 Features

* G Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement $SSOLFDWLRQV LED Display Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć - Pulse d b Drain-source Diode

MT2312-MTSemiconductor.pdf