MT4600 Dual N & P-Channel PowerTrench MOSFET

MT Semiconductor

Description

MT4600 Dual N & P-Channel Po werTrench® MOSFET .
These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process th.

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Datasheet Specifications

Part number: MT4600
Manufacturer: MT Semiconductor
File Size: 496.26 KB
Datasheet: MT4600-MTSemiconductor.pdf
Description: Dual N & P-Channel PowerTrench MOSFET

Features

* N-Channel 30V/5A, RDS (ON) = 28mΩ (max. ) @ VGS =4.5V RDS (ON) = 38mΩ (max. ) @ VGS =2.5V

Applications

* where low in-line power loss and fast switching are required. $SSOLFDWLRQV '&'&SULPDUEULGJH '&'&6QFKURQRXVUHFWLILFDWLRQ +RWVZDS )DQGULYH Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Volta

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MT4600 Dual P-Channel PowerTrench MOSFET MT Semiconductor

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