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MT4606 Datasheet - MT Semiconductor

N+P-Channel Enhancement Mode Field Effect Transistor

MT4606 Features

* Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V

* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V

* Fast switching speed

* High power and handling capability in a widely used surface mou

MT4606 General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for lo.

MT4606 Datasheet (476.85 KB)

Preview of MT4606 PDF

Datasheet Details

Part number:

MT4606

Manufacturer:

MT Semiconductor

File Size:

476.85 KB

Description:

N+p-channel enhancement mode field effect transistor.

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TAGS

MT4606 N +P-Channel Enhancement Mode Field Effect Transistor MT Semiconductor

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