MT4606 N+P-Channel Enhancement Mode Field Effect Transistor

MT Semiconductor

Description

MT4606 September 2008 MT4606 Dual N & P-Channel PowerTrench MOSFET General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process t.

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Datasheet Specifications

Part number: MT4606
Manufacturer: MT Semiconductor
File Size: 476.85 KB
Datasheet: MT4606-MTSemiconductor.pdf
Description: N+P-Channel Enhancement Mode Field Effect Transistor

Features

* Q1: N-Channel 7A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
* Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
* Fast switching speed
* High power and handling capability in a widely used surface mou

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MT4606 N +P-Channel Enhancement Mode Field Effect Transistor MT Semiconductor

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