MDD1051 - Single N-channel MOSFET
MDD1051 Features
* VDS = 150V ID = 28A @VGS = 10V RDS(ON) (MAX) < 46.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited)
