Part number:
MDD1051
Manufacturer:
MagnaChip
File Size:
1.06 MB
Description:
Single n-channel mosfet.
* VDS = 150V ID = 28A @VGS = 10V RDS(ON) (MAX) < 46.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited)
MDD1051
MagnaChip
1.06 MB
Single n-channel mosfet.
📁 Related Datasheet
MDD1051RH - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MDD1051RH
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low ga.
MDD1080-18N7 - Diode Modules
(IXYS)
IXYS
Date: 13th Mar 2013 Data Sheet Issue: 1
Diode Modules MD#1080
Absolute Maximum Ratings
VRRM VDRM
[V]
1800 2400 2800
1080-18N7 1080-24N7 1080.
MDD1080-24N7 - Diode Modules
(IXYS)
IXYS
Date: 13th Mar 2013 Data Sheet Issue: 1
Diode Modules MD#1080
Absolute Maximum Ratings
VRRM VDRM
[V]
1800 2400 2800
1080-18N7 1080-24N7 1080.
MDD1080-28N7 - Diode Modules
(IXYS)
IXYS
Date: 13th Mar 2013 Data Sheet Issue: 1
Diode Modules MD#1080
Absolute Maximum Ratings
VRRM VDRM
[V]
1800 2400 2800
1080-18N7 1080-24N7 1080.
MDD10N074RH - N-channel MOSFET
(MagnaChip)
Magnachip Power Technology
MDD10N074RH
MDD10N074RH
Single N-channel Trench MOSFET 100V 7.8mΩ 60A
FEATURES • Trench power MOSFET technology • Very lo.
MDD142-08N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-08N1
2 13
MDD142-08N1
VRRM I FAV VF
= 2x 800 V = 165 A = 1.05 V
Backside: isolated
Feature.
MDD142-12N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-12N1
2 13
MDD142-12N1
VRRM I FAV VF
= 2x 1200 V = 165 A = 1.05 V
Backside: isolated
Featur.
MDD142-14N1 - Standard Rectifier
(IXYS)
Standard Rectifier Module
Phase leg
Part number
MDD142-14N1
2 13
MDD142-14N1
VRRM I FAV VF
= 2x 1400 V = 165 A = 1.05 V
Backside: isolated
Featur.
