MDP9N50BTH Features
* VDS = 500V ID = 9.0A @VGS = 10V RDS(ON) ≤ 0.85Ω @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) P
Datasheet Details
MDP9N50BTH, MDP9N50B
MagnaChip
1.12 MB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: MDP9N50BTH, MDP9N50B.
Please refer to the document for exact specifications by model.
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MDP9N50BTH Distributor
