MDS3604 Datasheet, Mosfet, MagnaChip

MDS3604 Features

• Mosfet  VDS = -30V  ID = -12.1A @VGS = -20V  RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications  Load Switch  General purpose applications  Smart

PDF File Details

Part number:

MDS3604

Manufacturer:

MagnaChip

File Size:

1.01MB

Download:

📄 Datasheet

Description:

Single p-channel trench mosfet. The MDS3604 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Managemen

MDS3604 Application

• Applications common in Notebook Computers and Portable Battery Packs. Features  VDS = -30V  ID = -12.1A @VGS = -20V  RDS(ON) < 10.0mΩ @VGS

TAGS

MDS3604

MagnaChip

📁 Related Datasheet

MDS3603 - P-Channel Trench MOSFET (MagnaChip)
MDS3603– Single P-Channel Trench MOSFET MDS3603 Single P-Channel Trench MOSFET, -30V, -12A, 10.1mΩ General Description The MDS3603 uses advanced Mag.

MDS3651 - Single P-Channel Trench MOSFET (MagnaChip)
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ General Description The MDS3651.

MDS3652 - Single P-Channel Trench MOSFET (MagnaChip)
MDS3652– Single P-Channel Trench MOSFET MDS3652 Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ General Description The MDS3652 uses advanced Magna.

MDS3653 - Single P-Channel MOSFET (MagnaChip)
MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ MDS3653 Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ General Description The MDS3653 use.

MDS30 - Three Phase Rectifier Bridge (YZPST)
.

MDS30 - Three Phases Rectification Bridge Modules (TECHSEM)
TECHSEM Features： n Isolated mounting base 2500V~ n Pressure contact technology with Increased power cycling capability n Space and weight savings Ty.

MDS30 - Three Phase Bridge Rectifier (Naina Semiconductor)
Naina Semiconductor Ltd. MDS30 Three Phase Bridge Rectifier, 30 Amps Features · Easy connections · Excellent power volume ratio · Insulated type Vo.

MDS35 - DIODE / SCR MODULE (ST Microelectronics)
MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION.

MDS35-10 - Three Phase Bridge Rectifier (Yangzhou Yangjie)
MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction.

MDS35-12 - Three Phase Bridge Rectifier (Yangzhou Yangjie)
MDS35-4 THRU MDS35-16 Three Phase Bridge Rectifiers Features ● UL recognition, file #E230084 ● Low thermal resistance ● Glass passivated chip junction.