MDS3753E P-channel MOSFET

MagnaChip

Description

MDS3753E * P-Channel Trench MOSFET MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ General .
The MDS3753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low.

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Datasheet Specifications

Part number: MDS3753E
Manufacturer: MagnaChip
File Size: 1.00 MB
Datasheet: MDS3753E-MagnaChip.pdf
Description: P-channel MOSFET

Features

*  VDS = -40V  ID = -7.1A @ VGS = 10V  RDS(ON)

Applications

*  Inverters  General purpose applications D 8(D)7(D)6(D)5(D) 1(S)2(S)3(S) 4(G) G S Absolute Maximum Ratings (TA =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy J

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MDS3753E P-channel MOSFET MagnaChip

MagnaChip MDS3753E-like datasheet