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MDS3651 Single P-Channel Trench MOSFET

MDS3651 Description

MDS3651 * Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ General .
The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Feat.

MDS3651 Features

*  VDS = -30V  ID = -6.0A @ VGS = -10V  RDS(ON)

MDS3651 Applications

*  Inverters  General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanch

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Datasheet Details

Part number
MDS3651
Manufacturer
MagnaChip
File Size
812.24 KB
Datasheet
MDS3651-MagnaChip.pdf
Description
Single P-Channel Trench MOSFET

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