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SLB7N65C

N-Channel MOSFET

SLB7N65C Features

* - 7.0A, 650V, RDS(on) = 1.2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

SLB7N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB7N65C Datasheet (261.38 KB)

Preview of SLB7N65C PDF

Datasheet Details

Part number:

SLB7N65C

Manufacturer:

Maple Semiconductor

File Size:

261.38 KB

Description:

N-channel mosfet.

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TAGS

SLB7N65C N-Channel MOSFET Maple Semiconductor

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