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SLB10N65S N-Channel MOSFET

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Description

SLB10N65S/SLI10N65S SLB10N65S/ SLI10N65S 650V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLB10N65S
Manufacturer
Maple Semiconductor
File Size
642.35 KB
Datasheet
SLB10N65S-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB10N65S SLI10N65S

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