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SLB40N26C

260V N-Channel MOSFET

SLB40N26C Features

* - 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB40N26C/SLI40N26C

SLB40N26C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB40N26C Datasheet (351.12 KB)

Preview of SLB40N26C PDF

Datasheet Details

Part number:

SLB40N26C

Manufacturer:

Maple Semiconductor

File Size:

351.12 KB

Description:

260v n-channel mosfet.

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TAGS

SLB40N26C 260V N-Channel MOSFET Maple Semiconductor

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