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SLB4N60C N-Channel MOSFET

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Description

SLB4N60C / SLI4N60C SLB4N60C / SLI4N60C 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLB4N60C
Manufacturer
Maple Semiconductor
File Size
264.23 KB
Datasheet
SLB4N60C-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 4.5A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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