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SLB4N60C

N-Channel MOSFET

SLB4N60C Features

* - 4.5A, 600V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

SLB4N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB4N60C Datasheet (264.23 KB)

Preview of SLB4N60C PDF

Datasheet Details

Part number:

SLB4N60C

Manufacturer:

Maple Semiconductor

File Size:

264.23 KB

Description:

N-channel mosfet.

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TAGS

SLB4N60C N-Channel MOSFET Maple Semiconductor

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