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SLB4N65C Datasheet - Maple Semiconductor

SLB4N65C-MapleSemiconductor.pdf

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Datasheet Details

Part number:

SLB4N65C

Manufacturer:

Maple Semiconductor

File Size:

263.87 KB

Description:

N-channel mosfet.

SLB4N65C, N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLB4N65C Features

* - 4.0A, 650V, RDS(on) = 2.9Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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