SLB12N65C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLB12N65C Features

* - 12A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 47nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

SLB12N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB12N65C Datasheet (379.35 KB)

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Part number:

SLB12N65C

Manufacturer:

Maple Semiconductor

File Size:

379.35 KB

Description:

N-channel mosfet.

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SLB12N65C N-Channel MOSFET Maple Semiconductor

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SLB12N65C Features

SLB12N65C General Description

Datasheet Details

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Description:

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