SLB13N50C Datasheet - Maple Semiconductor

SLB13N50C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB13N50C Features

* - 13A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB13N50C / SLI13N50C VDS

SLB13N50C-MapleSemiconductor.pdf