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SLB150N06T - 60V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 150A, 60V, RDS(on)Typ = 3.1mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S TO-263 D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Datasheet Details

Part number SLB150N06T
Manufacturer Msemitek
File Size 0.96 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet SLB150N06T Datasheet
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SLB150N06T SLB150N06T 60V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application Load Switch Power Management Features - 150A, 60V, RDS(on)Typ = 3.
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