SLB80R240GT Datasheet (Msemitek) - 800V N-Channel Multi-EPI Super JMOSFET

SLB80R240GT, 800V N-Channel Multi-EPI Super JMOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices

SLB80R240GT Features

* - 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ. Qg =46nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D GDS TO-220F G S TO-263 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS