SLB80R240GT

800V N-Channel Multi-EPI Super JMOSFET

Msemitek

SLB80R240GT Features

* - 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ. Qg =46nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D GDS TO-220F G S TO-263 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS

SLB80R240GT General Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB80R240GT Datasheet (1.14 MB)

SLB80R240GT Datasheet Preview — Preview of SLB80R240GT PDF

Datasheet Details

Part number:

SLB80R240GT

Manufacturer:

Msemitek

File Size:

1.14 MB

Description:

800v n-channel multi-epi super jmosfet.

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SLB80R240GT 800V N-Channel Multi-EPI Super JMOSFET Msemitek

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SLB80R240GT Features

SLB80R240GT General Description

Datasheet Details

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Description:

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