SLB80R240GT - 800V N-Channel Multi-EPI Super JMOSFET

Msemitek

Datasheet Details

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

- 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ. Qg =46nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D GDS TO-220F G S TO-263 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
- Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
- Pulsed (Note 1) Gate-Source Voltage Single Pulsed Av.

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