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SLB830S

N-Channel MOSFET

SLB830S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-262 TO-261 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB830S SLI830S VDSS

SLB830S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB830S Datasheet (486.85 KB)

Preview of SLB830S PDF

Datasheet Details

Part number:

SLB830S

Manufacturer:

Maple Semiconductor

File Size:

486.85 KB

Description:

N-channel mosfet.

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TAGS

SLB830S N-Channel MOSFET Maple Semiconductor

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