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SLB830S Datasheet - Maple Semiconductor

SLB830S N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB830S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-262 TO-261 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB830S SLI830S VDSS

SLB830S Datasheet (486.85 KB)

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Datasheet Details

Part number:

SLB830S

Manufacturer:

Maple Semiconductor

File Size:

486.85 KB

Description:

N-channel mosfet.

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TAGS

SLB830S N-Channel MOSFET Maple Semiconductor

SLB830S Distributor