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SLB840F

500V N-Channel MOSFET

SLB840F Features

* - 8A, 500V, RDS(on) typ. = 0.7Ω@VGS = 10V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS

SLB840F General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB840F Datasheet (363.87 KB)

Preview of SLB840F PDF

Datasheet Details

Part number:

SLB840F

Manufacturer:

Maple Semiconductor

File Size:

363.87 KB

Description:

500v n-channel mosfet.

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TAGS

SLB840F 500V N-Channel MOSFET Maple Semiconductor

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