SLB80R240SJ Datasheet (Maple Semiconductor)

SLB80R240SJ, N-Channel MOSFET

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SLB80R240SJ Features

* - 20A, 800V, RDS(on) typ.= 0.22Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 70nC) SLP80R240SJ SLF80R240SJ SLB80R240SJ D GDS TO-220 GDS TO-220F D2-PAK GS D G S Absolute Maximum Ratings TC = 25°C unless oth