SLB80R600SJ - N-Channel MOSFET

Maple Semiconductor

SLB80R600SJ Datasheet Preview — Preview of SLB80R600SJ PDF

Datasheet Details

Part number	SLB80R600SJ
Manufacturer	Maple Semiconductor
File Size	577.12 KB
Description	N-Channel MOSFET
Datasheet	SLB80R600SJ-MapleSemiconductor.pdf

SLB80R600SJ Product details

Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nbL7oo.e6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion SLD80R600SJ,

Features

-10A, 800V, RDS(on) typ. = 0.55Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 35nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter D2-PAK/D-PAK I2-PAK / I-.

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Published: Dec 27, 2018 |