SLB80R600SJ Datasheet (Maple Semiconductor)

SLB80R600SJ, N-Channel MOSFET

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i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfor

SLB80R600SJ Features

* -10A, 800V, RDS(on) typ.= 0.55Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 35nC) DD GDS TO-220 GDS TO-220F GDS DD D2-PAK GS GS D-PAK GDS I2-PAK I-PAK G S Absolute Maximum Ratings TC = 25°C unless oth