SLB160N10G3 - 100V N-Channel MOSFET

Msemitek

Datasheet Details

This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.

- N-Channel:100V 160A RDS(on)Typ= 3.7mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipatio.

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