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SLB160N10G3 - 100V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - N-Channel:100V 160A RDS(on)Typ= 3.7mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipatio.

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Datasheet Details

Part number SLB160N10G3
Manufacturer Msemitek
File Size 1.02 MB
Description 100V N-Channel MOSFET
Datasheet download datasheet SLB160N10G3 Datasheet
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Full PDF Text Transcription

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SLB160N10G3 SLB160N10G3 100V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products. Features - N-Channel:100V 160A RDS(on)Typ= 3.
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