SLB160N10G3 Datasheet - Msemitek

SLB160N10G3 100V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device.

SLB160N10G3 Features

* - N-Channel:100V 160A RDS(on)Typ= 3.7mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC R θJA TJ, TSTG TL P

SLB160N10G3-Msemitek.pdf