SLB60R075E7D Datasheet - Msemitek

SLB60R075E7D 60V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB60R075E7D Features

* - 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ. Qg =80nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS

SLB60R075E7D-Msemitek.pdf