SLB60R075E7D - 60V N-Channel MOSFET

Msemitek

Datasheet Details

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

- 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ. Qg =80nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Aval.

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