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SLB60R075E7D

60V N-Channel MOSFET

SLB60R075E7D Features

* - 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ. Qg =80nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS

SLB60R075E7D General Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB60R075E7D Datasheet (1.10 MB)

Preview of SLB60R075E7D PDF

Datasheet Details

Part number:

SLB60R075E7D

Manufacturer:

Msemitek

File Size:

1.10 MB

Description:

60v n-channel mosfet.

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SLB60R075E7D 60V N-Channel MOSFET Msemitek

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