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SLB10N65C N-Channel MOSFET

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Description

SLB10N65C / SLI10N65C SLB10N65C / SLI10N65C 650V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLB10N65C
Manufacturer
Maple Semiconductor
File Size
288.40 KB
Datasheet
SLB10N65C-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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