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SLF2N60UZ - N-Channel MOSFET

SLF2N60UZ Description

SLP2N60UZ / SLF2N60UZ SLP2N60UZ / SLF2N60UZ 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLF2N60UZ Features

* - 2,0A, 600V, RDS(on)typ = 4Ω@VGS = 10 V - Low gate charge ( typical 5.8nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, T

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N-Channel MOSFET Maple Semiconductor
Maple Semiconductor SLF2N60UZ-like datasheet