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SLF2N60UZ

N-Channel MOSFET

SLF2N60UZ Features

* - 2,0A, 600V, RDS(on)typ = 4Ω@VGS = 10 V - Low gate charge ( typical 5.8nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, T

SLF2N60UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF2N60UZ Datasheet (1.01 MB)

Preview of SLF2N60UZ PDF

Datasheet Details

Part number:

SLF2N60UZ

Manufacturer:

Maple Semiconductor

File Size:

1.01 MB

Description:

N-channel mosfet.

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TAGS

SLF2N60UZ N-Channel MOSFET Maple Semiconductor

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