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SLF2N65UZ

N-Channel MOSFET

SLF2N65UZ Features

* - 2.0A, 650V, RDS(on) typ. = 4.3Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLP2N65UZ SLF2N65UZ

SLF2N65UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF2N65UZ Datasheet (1.19 MB)

Preview of SLF2N65UZ PDF

Datasheet Details

Part number:

SLF2N65UZ

Manufacturer:

Maple Semiconductor

File Size:

1.19 MB

Description:

N-channel mosfet.

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TAGS

SLF2N65UZ N-Channel MOSFET Maple Semiconductor

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