SLF2N65UZ Datasheet - Maple Semiconductor

SLF2N65UZ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF2N65UZ Features

* - 2.0A, 650V, RDS(on) typ. = 4.3Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLP2N65UZ SLF2N65UZ

SLF2N65UZ-MapleSemiconductor.pdf