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SLI5N65S

N-Channel MOSFET

SLI5N65S Features

* - 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB5N65S SLI5N65S VDS

SLI5N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLI5N65S Datasheet (479.25 KB)

Preview of SLI5N65S PDF

Datasheet Details

Part number:

SLI5N65S

Manufacturer:

Maple Semiconductor

File Size:

479.25 KB

Description:

N-channel mosfet.

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TAGS

SLI5N65S N-Channel MOSFET Maple Semiconductor

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