Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 12A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 47nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Volta.
SLI12N65C-MapleSemiconductor.pdf
