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SLI14N50C

500V N-Channel MOSFET

SLI14N50C Features

* - 13.5A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 46nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt P

SLI14N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLI14N50C Datasheet (330.47 KB)

Preview of SLI14N50C PDF

Datasheet Details

Part number:

SLI14N50C

Manufacturer:

Maple Semiconductor

File Size:

330.47 KB

Description:

500v n-channel mosfet.

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TAGS

SLI14N50C 500V N-Channel MOSFET Maple Semiconductor

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