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SLI13N50C

N-Channel MOSFET

SLI13N50C Features

* - 13A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB13N50C / SLI13N50C VDS

SLI13N50C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLI13N50C Datasheet (0.96 MB)

Preview of SLI13N50C PDF

Datasheet Details

Part number:

SLI13N50C

Manufacturer:

Maple Semiconductor

File Size:

0.96 MB

Description:

N-channel mosfet.

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TAGS

SLI13N50C N-Channel MOSFET Maple Semiconductor

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