Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 13A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLB13N50C / SLI13N50C
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1.
SLI13N50C-MapleSemiconductor.pdf
