Description
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
Features
- - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D2-PAK
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLB10N65S
SLI10N65S
VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note.
SLI10N65S-MapleSemiconductor.pdf
