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SLI10N65S

N-Channel MOSFET

SLI10N65S Features

* - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB10N65S SLI10N65S

SLI10N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLI10N65S Datasheet (642.35 KB)

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Datasheet Details

Part number:

SLI10N65S

Manufacturer:

Maple Semiconductor

File Size:

642.35 KB

Description:

N-channel mosfet.

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TAGS

SLI10N65S N-Channel MOSFET Maple Semiconductor

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