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ME100N15T-G

N-Channel MOSFET

ME100N15T-G Features

* RDS(ON)≦13.6mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

* The Ordering Inform

ME100N15T-G General Description

The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME100N15T-G Datasheet (694.87 KB)

Preview of ME100N15T-G PDF

Datasheet Details

Part number:

ME100N15T-G

Manufacturer:

Matsuki

File Size:

694.87 KB

Description:

N-channel mosfet.

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ME100N15T-G N-Channel MOSFET Matsuki

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