ME10N15

N-Channel MOSFET

Matsuki

ME10N15 Features

* RDS(ON)≦345mΩ@VGS=10V

* RDS(ON)≦365mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte

ME10N15 General Description

The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular ph.

ME10N15 Datasheet (940.32 KB)

ME10N15 Datasheet Preview — Preview of ME10N15 PDF

Datasheet Details

Part number:

ME10N15

Manufacturer:

Matsuki

File Size:

940.32 KB

Description:

N-channel mosfet.

📁 Related Datasheet

ME10N15-G N-Channel MOSFET (Matsuki)

ME100N03T N-Channel MOSFET (Matsuki)

ME100N03T-G N-Channel MOSFET (Matsuki)

ME100N15T-G N-Channel MOSFET (Matsuki)

ME1117 1A Low Dropout Voltage Regulator (Matsuki)

ME1117 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)

ME1117-1.8 1A Low Dropout Voltage Regulator (Matsuki)

ME1117-2.5 1A Low Dropout Voltage Regulator (Matsuki)

ME1117-3.3 1A Low Dropout Voltage Regulator (Matsuki)

ME1117-5.0 1A Low Dropout Voltage Regulator (Matsuki)

TAGS

ME10N15 N-Channel MOSFET Matsuki

Image Gallery

ME10N15 Features

ME10N15 General Description

Datasheet Details

File Size:

Description:

ME10N15 Distributor