ME10N15-G, ME10N15 Datasheet - Matsuki

ME10N15-G N-Channel MOSFET

The ME10N15 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular ph.

ME10N15-G Features

* RDS(ON)≦345mΩ@VGS=10V

* RDS(ON)≦365mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte

ME10N15-Matsuki.pdf

ME10N15-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME10N15-G, ME10N15. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME10N15-G, ME10N15

Manufacturer:

Matsuki

File Size:

940.32 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME10N15-G, ME10N15.
Please refer to the document for exact specifications by model.

ME10N15-G Distributor

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ME10N15-G ME10N15 N-Channel MOSFET Matsuki