ME12N15-G, ME12N15 Datasheet - Matsuki

ME12N15-G N-Channel MOSFET

The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME12N15-G Features

* RDS(ON)≦150mΩ@VGS=10V

* RDS(ON)≦250mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* Load Switch

* Th Ordering Information: ME12N15

ME12N15-Matsuki.pdf

ME12N15-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME12N15-G, ME12N15. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME12N15-G, ME12N15

Manufacturer:

Matsuki

File Size:

934.58 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME12N15-G, ME12N15.
Please refer to the document for exact specifications by model.

ME12N15-G Distributor

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ME12N15-G ME12N15 N-Channel MOSFET Matsuki