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ME12N15-G, ME12N15 - N-Channel MOSFET

Matsuki

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ME12N15-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME12N15-G, ME12N15. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	ME12N15-G, ME12N15
Manufacturer	Matsuki
File Size	934.58 KB
Description	N-Channel MOSFET
Datasheet	ME12N15-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME12N15-G, ME12N15. Please refer to the document for exact specifications by model.

ME12N15-G Product details

Description

The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦150mΩ@VGS=10V.
RDS(ON)≦250mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 21, 2018 |