ME12N04-G, ME12N04 Datasheet - Matsuki

ME12N04-G N-Channel 40-V (D-S) MOSFET

The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME12N04-G Features

* RDS(ON)=28mΩ@VGS=10V (N-Ch)

* RDS(ON)=52mΩ@VGS=4.5V (N-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered Syste

ME12N04-Matsuki.pdf

ME12N04-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME12N04-G, ME12N04. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME12N04-G, ME12N04

Manufacturer:

Matsuki

File Size:

949.82 KB

Description:

N-channel 40-v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME12N04-G, ME12N04.
Please refer to the document for exact specifications by model.

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ME12N04-G ME12N04 N-Channel 40-V D-S MOSFET Matsuki

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