Description
ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL .
The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* RDS(ON)=28mΩ@VGS=10V (N-Ch)
* RDS(ON)=52mΩ@VGS=4.5V (N-Ch)
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* LCD Display inverter
PIN
CONFIGURATION
(TO-252-3L) Top View
e Ordering Information: ME12N04 (Pb-free)
ME12N04-G (Green product-Halogen free)
Absolute Maximum Ra