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ME12N04-G, ME12N04 - N-Channel 40-V (D-S) MOSFET

Matsuki

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ME12N04-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME12N04-G, ME12N04. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	ME12N04-G, ME12N04
Manufacturer	Matsuki
File Size	949.82 KB
Description	N-Channel 40-V (D-S) MOSFET
Datasheet	ME12N04-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME12N04-G, ME12N04. Please refer to the document for exact specifications by model.

ME12N04-G Product details

Description

The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)=28mΩ@VGS=10V (N-Ch).
RDS(ON)=52mΩ@VGS=4.5V (N-Ch).
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Sep 23, 2014 |