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ME12N04-G, ME12N04 N-Channel 40-V (D-S) MOSFET

ME12N04-G Description

ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL .
The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME12N04-G Features

* RDS(ON)=28mΩ@VGS=10V (N-Ch)
* RDS(ON)=52mΩ@VGS=4.5V (N-Ch)
* Super high density cell design for extremely low RDS(ON)

ME12N04-G Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME12N04 (Pb-free) ME12N04-G (Green product-Halogen free) Absolute Maximum Ra

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME12N04-G, ME12N04. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME12N04-G, ME12N04
Manufacturer
Matsuki
File Size
949.82 KB
Datasheet
ME12N04-Matsuki.pdf
Description
N-Channel 40-V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME12N04-G, ME12N04.
Please refer to the document for exact specifications by model.

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Matsuki ME12N04-G-like datasheet