ME12N04 Datasheet (Matsuki) - N-Channel 40-V (D-S) MOSFET

ME12N04, N-Channel 40-V (D-S) MOSFET

The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME12N04 Features

* RDS(ON)=28mΩ@VGS=10V (N-Ch)

* RDS(ON)=52mΩ@VGS=4.5V (N-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered Syste