Description
The ME2302D is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
Features
- RDS(ON)≦85mΩ@VGS=4.5V.
- RDS(ON)≦115mΩ@VGS=2.5V.
- RDS(ON)≦130mΩ@VGS=1.8V.
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current
capability.